[A] INTRODUCTION TO SEMICONDUCTOR ENGINEERING FOR SHORT-WAVELENGTH APPLICATION

[B] CRYSTAL GROWTH OF SEMICONDUCTORS FOR SHORT-WAVELENGTH APPLICATION
ADVANCED INDUSTRY PRODUCTION MOCVD SYSTEMS (EMCORE/VECCO, AIXTRON, THOMAS SWAN);
HIGH TEMPERATURE (HT) SUBLIMATION GROWTH OF BULK SIC CRYSTAL;
HT CHEMICAL VAPOR DEPOSITION (CVD) OF SIC HETERO- AND HOMO-EPITAXY STRUCTURES;
EPITAXY OF GAN-BASED MATERIALS AND QUANTUM STRUCTURES ON SI, SIC AND OTHER SUBSTRATES;
EPITAXY OF SHORT WAVELENGTH SEMICONDUCTORS FOR ADVANCED ELECTRONIC DEVICES;
VARIOUS OTHER CRYSTAL GROWTH TECHNIQUES ON ZNO, III-NITRIDES ETC.;

[C] ANALYSIS ENGINEERING FOR SHORT-WAVELENGTH SEMICONDUCTORS
POLYTYPE CRYSTALLINE STRUCTURES; STRESS AND STRAIN IN LAYERED STRUCTURAL MATERIALS;
IN-SITU EPITAXY MONITORING IN MOCVD GROWTH OF SHORT-WAVELENGTH SEMICONDUCTORS;
INTERDISCIPLINARY TECHNIQUES FOR MATERIALS ANALYSIS ON BLUE-UV SEMICONDUCTORS;
OPTICAL ANALYSIS (PHOTOLUMINESCENCE, RAMAN SCATTERING, TRANSMISSION/REFLECTANCE);
STRUCTURAL ANALYSIS (HIGH-RESOLUTION X-RAY DIFFRACTION, ELECTRON MICROSCOPY);
SURFACE AND NUCLEAR SCIENCE/ENGINEERING ANALYSIS; DEFECTS ENGINEERING.

[D] NANO-STRUCTURAL AND ELECTRONIC DEVICE ENGINEERING IN SHORT-WAVELENGTH RANGE
MOCVD GROWTH OF III-NITRIDES QUANTUM DOTS; GROWTH OF NANO-STRUCTURAL SIC AND ZNO;
OPTICAL AND STRUCTURAL PROPERTIES OF NANO-STRUCTURAL SHORT-WAVELENGTH SEMICONDUCTORS;
SIC AND (ALINGA)N FOR HIGH SPEED, HIGH FREQUENCY AND POWER ELECTRONICS APPLICATIONS;
PROCESSING TECHNIQUES ON WIDE-GAP SEMICONDUCTOR ELECTRONICS AND NANO-STRUCTURAL DEVICES.